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  Semiconductor for next-generation electronics
 
  Researchers have demonstrated the high-performance potential of an experimental transistor made of a semiconductor called beta gallium oxide, which could bring new ultra-efficient switches.

The transistor, called a gallium oxide on insulator field effect transistor, or GOOI, is especially promising because it possesses an “ultra-wide bandgap,” a trait needed for switches in high-voltage applications.

For more, check out this Purdue University story.

 
      Posted by: Agitator!!, January 31, 2017, 12:09 pm  

 
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